MOSFETs
X2
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Main switching transistor in SMPS
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Low Rds(on): low gate charge, dv/dt ruggedness
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IGBTs
MIXA, MIXG
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Switching power supplies
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Rugged design with thin wafer technology; Short circuit rated for 10 μsec, low gate charge; low EMI and competitive low Vce(sat)
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Diodes Modules
SP3213, PESD
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Switching power supplies
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Rugged design with thin wafer technology; Short circuit rated for 10 μsec; low gate charge; low EMI and competitive
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Diode Arrays
SP1012, SP1003, AQxx-02HTG
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Protect sensitive electronic parts from voltage transients
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Ultra-low capacitance; compact form factor; low clamping voltage, low leakage current; industry’s smallest footprint available (0201) |
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TVS Diodes
SMCJ, P6KE, P6SMB
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Protect sensitive electronic components from voltage transients |
600 W peak pulse capability; glass passivated chip junction |
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Polymer ESD Suppressors
PGB10603, PGB10402
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Protect the Wi-Fi chipset from user-induced ESD events |
Ultra-low capacitance; compact form factor; low leakage current; fast response |
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TVS Arrays
SPXX, SACB, SMAJ, SMBJ, PESD, SP3213, SM712
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Protect ICs from ESD |
Excellent clamping capability, low capacitance of 1.0 pF per I/O |
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Gate Drive
IX4340 |
High side and low side gate driver for power MOSFETs
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Capable of sourcing and sinking up to 5 A |
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SCR
SJxx08xSx/SJxx08xx |
Triggers electro-mechanical relay to disengage electrical contacts during fault
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Up to 600 V capability; high surge capability up to 100 A
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MOV
LA, C-III, UltraMOV |
Protect the power unit from lightning and other voltage transients on the AC line |
Can meet wide-set surge withstand specifications: 40 J – 530 J (2 mS)
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