SiC MOSFETs

MCB60I1200TZ

  • Electrical Characteristics
    • Catalog # MCB60I1200TZ
    • VDSS (V) 1200
    • Rds(on) max @ 25°C (mΩ) 34
    • ID,cont @ 25 ℃ (A) 90
    • RthJC (K/W) (Diode) 0.27
    • TJ Max (°C) 175
    • Package Type TO-268AA (D3Pak) (2HV)
    • Configuration N-Channel
    • Qualification Industrial
    • Part Datasheet