HiPerFETâ„¢ and MOSFET

MMIX1T660N04T4

  • Application Spotlight
    • Electrical Characteristics
      • Catalog # MMIX1T660N04T4
      • Drain-Source Voltage (V) 40
      • Maximum On-Resistance @ 25 ℃ (Ohm) 0.00085
      • Continuous Drain Current @ 25 ℃ (A) 660
      • Gate Charge (nC) 860
      • Input Capacitance, CISS (pF) 44000
      • Thermal resistance [junction-case] (K/W) 0.18
      • Configuration Single
      • Package Type SMPD
      • Typical Reverse Recovery Time (ns) 60
      • Power Dissipation (W) 830
      • Status Obsolete
      • Sample Request No
      • Check Stock No
      • Partner ECAD Models MMIX1T660N04T4