X3 Class

IXTP90N20X3

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and

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  • Application Spotlight
    • Electrical Characteristics
      • Catalog # IXTP90N20X3
      • Drain-Source Voltage (V) 200
      • Maximum On-Resistance @ 25 ℃ (Ohm) 0.012
      • Continuous Drain Current @ 25 ℃ (A) 90
      • Gate Charge (nC) 78
      • Input Capacitance, CISS (pF) 5420
      • Thermal resistance [junction-case] (K/W) 0.32
      • Configuration Single
      • Package Type TO-220
      • Typical Reverse Recovery Time (ns) 124
      • Power Dissipation (W) 390
      • Status Active
      • Sample Request No
      • Partner ECAD Models IXTP90N20X3