X3 Class

IXFP50N20X3M

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and

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  • Application Spotlight
    • Electrical Characteristics
      • Catalog # IXFP50N20X3M
      • Drain-Source Voltage (V) 200
      • Maximum On-Resistance @ 25 ℃ (Ohm) 0.03
      • Continuous Drain Current @ 25 ℃ (A) 50
      • Gate Charge (nC) 33
      • Input Capacitance, CISS (pF) 2100
      • Thermal resistance [junction-case] (K/W) 3.7
      • Configuration Single
      • Typical Reverse Recovery Time (ns) 70
      • Power Dissipation (W) 34
      • Status Active
      • Sample Request No
      • Partner ECAD Models IXFP50N20X3M