X3 Class

IXFP130N15X3

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and

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  • Application Spotlight
    • Electrical Characteristics
      • Catalog # IXFP130N15X3
      • Drain-Source Voltage (V) 150
      • Maximum On-Resistance @ 25 ℃ (Ohm) 0.009
      • Continuous Drain Current @ 25 ℃ (A) 130
      • Gate Charge (nC) 80
      • Input Capacitance, CISS (pF) 5230
      • Thermal resistance [junction-case] (K/W) 0.32
      • Configuration Single
      • Package Type TO-220
      • Typical Reverse Recovery Time (ns) 80
      • Power Dissipation (W) 390
      • Status Active
      • Sample Request No
      • Check Stock Yes
      • Partner ECAD Models IXFP130N15X3