X3 Class

IXFH80N25X3

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and

Show More

  • Application Spotlight
    • Electrical Characteristics
      • Catalog # IXFH80N25X3
      • Drain-Source Voltage (V) 250
      • Maximum On-Resistance @ 25 ℃ (Ohm) 0.016
      • Continuous Drain Current @ 25 ℃ (A) 80
      • Gate Charge (nC) 83
      • Input Capacitance, CISS (pF) 5430
      • Thermal resistance [junction-case] (K/W) 0.32
      • Configuration Single
      • Package Type TO-247
      • Typical Reverse Recovery Time (ns) 120
      • Power Dissipation (W) 390
      • Status Active
      • Sample Request Yes
      • Check Stock Yes
      • Partner ECAD Models IXFH80N25X3