Discrete Package

MOS Gated Thyristor

MOS Gated Thyristor

VDM(V):
1500

ITSM 1μs TC = 25°C (kA):
7.6, 15.5, 32

ITSM 10μs TC = 25°C(kA):
3.5, 6.4, 11.8

Series Details